| PART |
Description |
Maker |
| TND027SW |
Excellent Power Device
|
Sanyo Semicon Device
|
| EN7437 |
Excellent Power Device, Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving, Dual SOIC8
|
ON Semiconductor
|
| TND525SS-TL-2H |
Excellent Power Device Half-bridge Drive, Single SOIC8
|
ON Semiconductor
|
| TND512MD |
ExPD(Excellent-Performance Power & RF Device) 3-phase Motor Drive Application
|
Sanyo Semicon Device
http://
|
| TN5D51 |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (12V Output type)
|
Sanyo Semicon Device
|
| TN6Q04 |
ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD
|
Sanyo Semicon Device
|
| IPD040N03LG IPS040N03LG |
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| FCX619 |
2W power dissipation, Excellent HFE characteristics up to 6 amps
|
TY Semiconductor Co., Ltd
|
| FCX1149A |
2W power dissipation, Excellent HFE characteristics up to 10 Amps.
|
TY Semiconductor Co., Ltd
|
| 35150-0290 35150-0293 35182-0190 |
1.8 TERM POSITION ASS LOC 351500290 INTERCONNECTION DEVICE
TERMINAL ASSURANCE LOCK YEL INTERCONNECTION DEVICE
.070 TPA 1.80 POWER CONN 351820190 INTERCONNECTION DEVICE
|
Molex, Inc.
|
| IPP023NE7N3G IPI023NE7N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
